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May 24 - Tuesday
8:40 - 9:20
TU1C:
Multi-GHz Frontend Circuits for Digital Applications
Chair:
Hermann Boss
Chair organization:
Rohde & Schwarz GmbH & Co KG
Co-chair:
Gregory Lyons
Co-chair organization:
Massachusetts Institute of Technology, Lincoln Laboratory
Location:
305
Abstract:
This session presents 5 papers that address the performance and data throughput enhancements of Multi-GHz frontend circuits.
A new SiGe MOS-HBT quasi CML switch is introduced and a differential feedthrough cancellation technique is applied in a T&H; amplifier. The session is continued with papers on InP technology for MUX modules and a linear differential amplifier and a feed forward equalizer.
Presentations in this session
TU1C-3:
A 50-GHz-Bandwidth InP-HBT Analog-MUX Module for High-Symbol-Rate Optical Communications Systems
Authors:
Hiroshi Yamazaki, Nippon Telegraph and Telephone Corp. (Japan);
Hitoshi Wakita, Nippon Telegraph and Telephone Corp. (Japan);
Hideyuki Nosaka, Nippon Telegraph and Telephone Corp. (Japan);
Kenji Kurishima, Nippon Telegraph and Telephone Corp. (Japan);
Minoru Ida, Nippon Telegraph and Telephone Corp. (Japan);
Akihide Sano, Nippon Telegraph and Telephone Corp. (Japan);
Yutaka Miyamoto, Nippon Telegraph and Telephone Corp. (Japan);
Munehiko Nagatani, Nippon Telegraph and Telephone Corp. (Japan);
Presenter:
Munehiko Nagatani, Nippon Telegraph and Telephone Corp., Japan
(8:40 - 9:00)
Abstract
An ultra-broadband 2:1 analog-multiplexer (A-MUX) module has been developed for optical communications systems with a high symbol rate. The A-MUX IC was designed and fabricated using InP HBTs, which have a peak ft and fmax of 290 and 320 GHz, respectively. The A-MUX module has a through bandwidth of over 50 GHz and operates at a clock rate of up to 50 GHz, leading to 100-GS/s operation. Its power consumption is as small as 0.5 W. In addition, we devised a novel method to double the bandwidth of DACs using the A-MUX. We succeeded in generating an 80-Gbaud (160-Gb/s) Nyquist PAM4 signal based on two 20-GHz-bandwidth sub-DACs and this A-MUX.
TU1C-4:
An Over-67-GHz-Bandwidth 2 Vppd Linear Differential Amplifier with Gain Control in 0.25-µm InP DHBT Technology
Authors:
Munehiko Nagatani, Nippon Telegraph and Telephone Corp. (Japan);
Kenji Kurishima, Nippon Telegraph and Telephone Corp. (Japan);
Minoru Ida, Nippon Telegraph and Telephone Corp. (Japan);
Hideyuki Nosaka, Nippon Telegraph and Telephone Corp. (Japan);
Hitoshi Wakita, Nippon Telegraph and Telephone Corp. (Japan);
Presenter:
Hitoshi Wakita, Nippon Telegraph and Telephone Corp., Japan
(9:00 - 9:20)
Abstract
This report presents a differential linear amplifier for multilevel transmissions at a high-symbol rate. We designed and fabricated this amplifier by using newly developed 0.25-μm InP DHBT technology, which yields a peak ft and fmax of over 400 GHz. This amplifier consists of a lumped variable-gain amplifier and a distributed output buffer for achieving a large gain control range and ultra-broadband performance. The -3 dB bandwidth and the differential gain are over 67 GHz and 10.7 dB, respectively. The output return loss is better than -10 dB up to 63 GHz. In addition to the ultra-broadband characteristics, a nearly 10-dB variable gain range was obtained. The amplifier provides a clear output waveform at symbol rates up to 100 Gbaud and 56 Gbaud with a NRZ signal and a PAM4 signal, respectively.
8:20 - 8:40
TU1F:
Methodolody and Hardware Development for High Power Microwave Industiral Applications
Chair:
Cheng Paul Wen
Chair organization:
Peking Univ.
Co-chair:
Steven Stitzer
Co-chair organization:
Northrop Grumman Mission Systems
Location:
308
Abstract:
Improved methods for dielectric properties measurements are presented along with matching techniques for high power systems and new applications for solid state amplifiers. System solution combining high power microwave sources in high pressure environment is also described.
Presentations in this session
TU1F-2:
Measurement of Temperature Dependent Permittivity of Liquid under Microwave Heating
Authors:
Yoshio Nikawa, Kokushikan University (Japan);
Presenter:
Yoshio Nikawa, Kokushikan University, Japan
Abstract
Microwave heating is one of the key technologies in medicine such as sterilization, synthesis of pharmacy and also uses in diagnostic and treatment. In application, it is necessary to obtain temperature dependent complex permittivity of material. For accurate measurement, one way is to apply a cylindrical cavity resonator. To apply microwave heating using the cavity resonator, it becomes possible to measure the temperature dependent permittivity of liquid material. In this study, TM010 cylindrical cavity resonator is designed of 2.45GHz band and developed the system to measure complex permittivity of liquid material in various temperatures. The cylindrical cavity resonator allows high microwaves power excitation and it can heat the sample dynamically with the measurement. The characteristics of the material as the temperature are measured by measuring transmission coefficient of the cylindrical cavity resonator with high power transmission.
8:50 - 9:00
TU1G:
Advanced Acoustic and Tunable Device Technologies for RF Systems
Chair:
Robert York
Chair organization:
Univ. of California, Santa Barbara
Co-chair:
Harvey Newman
Co-chair organization:
Naval Research Laboratory
Location:
309
Abstract:
New material advances show promise for implementing high performance adaptive switching and tuning technologies based on phase-change materials (PCM) and ferroelectrics. This session covers the latest advances in integrated phase-change switches, including a combination of PCM materials with acoustic resonators. Switchable FBARs using BST material and the latest modeling approaches are covered. A new tunable SAW filter is presented that combines acoustic and varactor technologies. The latest advances in tunable dielectrics are also presented, including a novel application of the material for power detection.
Presentations in this session
TU1G-4:
A New Tunable SAW Filter Circuit for Reconfigurable RF
Authors:
Takaya Wada, Murata Manufacturing Co., Ltd. (Japan);
Takashi Ogami, Murata Manufacturing Co., Ltd. (Japan);
Atsushi Horita, Murata Manufacturing Co., Ltd. (Japan);
Hidenori Obiya, Murata Manufacturing Co., Ltd. (Japan);
Masayoshi Koshino, Murata Manufacturing Co., Ltd. (Japan);
Makoto Kawashima, Murata Manufacturing Co., Ltd. (Japan);
Norio Nakajima, Murata Manufacturing Co., Ltd. (Japan);
Presenter:
Takaya Wada, Murata Manufacturing Co., Ltd., Japan
Abstract
In recent years, the mobile data traffic is increasing and many more frequency bands have been employed. A simple Pi type tunable band elimination filter (BEF) with switching function is investigated by using a wideband tunable surface acoustic wave (SAW) resonator circuit. The frequency of BEF is tuned approximately 31% by variable capacitors without spurious. In LTE low band, the arrangement of TX and RX frequencies is to be reversed in Band 13, 14 and 20 compared with the other bands. The steep edge slopes of the developed filter can be exchanged according to the resonance condition and switching. With combining the TX and RX tunable BEFs and the small sized broadband circulator, a new tunable duplexer is experimented that the TX-RX isolation is more than 50dB in LTE low band operations.
11:10 - 11:30
TU2B:
Celebrating the 80th anniversary of the Doherty Patent
Chair:
Leo de Vreede
Chair organization:
Delft Univ. of Technology
Co-chair:
Christian Fager
Co-chair organization:
Chalmers Univ. of Technology
Location:
304
Abstract:
80 years after its invention the Doherty power amplifier topology is dominating in wireless networks and is still expanding its territory. Its low hardware complexity, low cost, high performance and excellent high-power operation, has made it the favorite choice in a wide range of application scenarios. Although blessed with a relatively low hardware complexity, the Doherty topology represents still a very active research area, that every year yields new improvements in average efficiency, bandwidth, linearity / ease of pre-distortion, integration and operating frequency. In this session an overview is given of the most important milestones in Doherty design and implementation. Focus is on the key techniques to improve system efficiency, RF / video bandwidth, linearity and integration. We conclude this session with an outlook towards the evolution of the Doherty towards future / 5G applications.
Presentations in this session
TU2B-5:
Mixed-Signal Doherty Power Amplifiers in CMOS
Authors:
Hua Wang, Georgia Institute of Technology (United States);
Song Hu, Georgia Institute of Technology (United States);
Shouhei Kousai, Toshiba Corp. (Japan);
Presenter:
Hua Wang, Georgia Institute of Technology, United States
Abstract
There is an increasing interest to explore novel Doherty power amplifier (PA) architectures by utilizing digitally intensive architectures, i.e., RF power DACs, and mixed-signal techniques. In this paper, we will first review recent mixed-signal PA development. We will then present two mixed-signal Doherty PAs in CMOS. These digitally intensive designs enable precise controls of the Doherty main/auxiliary amplifiers to achieve optimum active load modulation for back-off efficiency enhancement. Moreover, the reprogramming nature of these mixed-signal Doherty PAs allows linearity enhancement and robust Doherty operations under antenna load variations. In addition, these mixed-signal PAs offer unique flexibility and allow hybrid integration with other PA techniques, e.g., Class-G operation, for further efficiency and linearity enhancement.
10:10 - 10:30
TU2E:
High Frequency Interconnects and Packaging
Chair:
Hiroshi Kondoh
Chair organization:
EHF Consulting
Co-chair:
John Papapolymerou
Co-chair organization:
Michigan State Univ.
Location:
307
Abstract:
This session discusses various schemes of interconnecting RF/microwave/mm-wave components for higher-levels of integration.
6 papers reveal new transmission lines for broadband interconnects, transitions between heterogenious transmission medias, MMIC chip-to-chip interconnects, and their integrations to MCM modules, with frequecy range from DC to 200GHz
Presentations in this session
TU2E-1:
X Band Low-Cost GaN TR Module with Anti-Radiation Structure
Authors:
Yukinobu Tarui, Mitsubishi Electric Corp. (Japan);
Akimichi Hirota, Mitsubishi Electric Corp. (Japan);
Isamu Ryokawa, Mitsubishi Electric Corp. (Japan);
Makoto Kimura, Mitsubishi Electric Corp. (Japan);
Yoshihiro Tsubota, Mitsubishi Electric Corp. (Japan);
Shuichi Sakata, Mitsubishi Electric Corp. (Japan);
Kiyoshi Ishida, Mitsubishi Electric Corp. (Japan);
Presenter:
Yukinobu Tarui, Mitsubishi Electric Corp., Japan
Abstract
Today AESA antenna is becoming more popular and lowering cost of key component like TR module is crucial to strength that trend, In this paper, a design of a low cost high power X band GaN module is described. In this module, all devices including HPA are surface mounted on resin board, and highly enforced heat dissipation design inside resin are adapted. More over unique anti-radiation property with wholly adapted EM shield design devices, enabling coverless module is described.
Prototype transmit module exhibits 13.3W output power with 30.8% efficiency at X band. Operational Isolation between channels is 29dB with coverless configuration. It weighs only 8.5g per channel, and it’s manufacturing cost is estimated to be 40% of our convention GaAs module.
TU2F:
Microwave biological sensing
Chair:
James Hwang
Chair organization:
Lehigh Univ.
Co-chair:
Katia Grenier
Co-chair organization:
Centre National de la Recherche Scientifique
Location:
308
Abstract:
This session will introduce recent achievements in biological sensing at cellular and molecular levels using microwave and radio frequency dielectric spectroscopy and interference technics.
Presentations in this session
TU2F-1:
Selectivity-Enhanced Glucose Measurement in Multicomponent Aqueous Solution by Broadband Dielectric Spectroscopy
Authors:
Masahito Nakamura, Nippon Telegraph and Telephone Corp. (Japan);
Takuro Tajima, Nippon Telegraph and Telephone Corp. (Japan);
Katsuhiro Ajito, Nippon Telegraph and Telephone Corp. (Japan);
Hiroshi Koizumi, Nippon Telegraph and Telephone Corp. (Japan);
Presenter:
Masahito Nakamura, Nippon Telegraph and Telephone Corp., Japan
Abstract
We demonstrate the detection of physiological-range glucose in a multicomponent aqueous solution through multivariate analysis of broadband dielectric spectra from 500 MHz to 50 GHz. To enhance the selectivity to glucose, we applied spectral preprocessing on dielectric spectra to extract the feature values of glucose and bovine serum albumin (BSA). Using the regression models derived from different concentrations of glucose and BSA, the analysis was carried out on the solutions with the physiological range of both components. The prediction error of glucose concentration was estimated at less than 73 mg/dL even in various concentrations of BSA. This technique is easily implemented with a microwave blood glucose sensor or in other biomedical applications that essentially require multicomponent analysis.
13:30 - 13:50
TU3B:
Wideband Power Amplifiers
Chair:
Ruediger Quay
Chair organization:
Fraunhofer IAF
Co-chair:
Arvind Keerti
Co-chair organization:
Qualcomm, Inc.
Location:
304
Abstract:
The session covers most recent developments in efficient power amplifiers for wireless communication based on siclion (Bi)CMOS and Gallium Nitride.
Presentations in this session
TU3B-1:
An S-band 240 W Output / 54 % PAE GaN Power Amplifier with Broadband Output Matching Network for both Fundamental and 2nd Harmonic Frequencies
Authors:
Takaaki Yoshioka, Mitsubishi Electric Corp. (Japan);
Naoki Kosaka, Mitsubishi Electric Corp. (Japan);
Masatake Hangai, Mitsubishi Electric Corp. (Japan);
Koji Yamanaka, Mitsubishi Electric Corp. (Japan);
Presenter:
Takaaki Yoshioka, Mitsubishi Electric Corp., Japan
Abstract
A broadband S-band high efficiency internally matched 240 W GaN high power amplifier (HPA) has been developed. To obtain wider operating bandwidth and higher efficiency HPA, an output matching network with shunt inductors and 2nd harmonic reflection open-stubs connected by transmission lines is employed. To verify this methodology, we fabricated an S-band HPA and the output power of 240 W and the power added efficiency of 54.4 % over from 2.6 to 3.4 GHz were achieved. To the authors’ knowledge, this is one of the widest bandwidth performances among the ever-reported S-band GaN HPAs over 100 W output power.
TU3D:
Advances in Terahertz Photonics
Chair:
Mona Jarrahi
Chair organization:
Univ. of California, Los Angeles
Co-chair:
Jeffrey Nanzer
Co-chair organization:
Johns Hopkins Univ.
Location:
306
Abstract:
This session gives an overview on recent advancements in terahertz photonics. Novel techniques for generation, detection, and manipulation of terahertz waves are presented.
Presentations in this session
TU3D-1:
Photonic-based Millimeter and Terahertz wave generation using a hybrid integrated dual DBR polymer laser
Authors:
Guillermo CARPINTERO, Universidad Carlos Iii De Madrid (Spain);
Shintaro HISATAKE, Osaka Univ. (Japan);
David DE FELIPE, Fraunhofer Heinrich Hertz Institute (Germany);
Robinson Cruzoe GUZMAN, Universidad Carlos III de Madrid (Spain);
Tadao NAGATSUMA, Osaka Univ. (Japan);
Norbert KEIL, Fraunhofer Heinrich Hertz Institute (Germany);
Thorsten Göbel, Fraunhofer Heinrich Hertz Institute (Germany);
Presenter:
Guillermo CARPINTERO, Universidad Carlos Iii De Madrid, Spain
Abstract
The generation of high frequency signals into the terahertz range is dominated by photonic-based systems pushing the development of ultra-broadband wireless communication links. Recently, photonic integrated circuits have been proposed to implement different photonic signal generation techniques offering different semiconductor laser structures. Here we present for the first time a dual wavelength source for optical heterodyning based on hybrid integration of complex passive and active InP elements on an optical polymer platform. The chip integrates two external cavity lasers, each with an InP gain chip coupled to a polymer phase and Bragg gratings sections, combined with a Y-junction. Each laser has a wavelength tuning range over 20 nm, enabling the generation of signals from tenths of GHz up to several THz with MHz resolution. We demonstrate the generation of a 330 GHz free-running beatnote has a linewidth of few MHz ( < 3 MHz)
May 25 - Wednesday
10:30 - 11:10
WE2C:
Acoustic Multiplexers for Carrier Aggregation
Chair:
Clemens Ruppel
Chair organization:
TDK
Co-chair:
Chengjie Zuo
Co-chair organization:
Qualcomm Technologies, Inc.
Location:
305
Abstract:
The increasing demand for more bands in mobile phones has increased the number of microwave acoustic filters in smartphones up to 60 today and will drive it towards over 100 in the near future. Among other measures and techniques, carrier aggregation (CA) has been introduced to optimize the use of the available frequency spectra. The LTE-Advanced CA is being deployed by operators at increasing speed.
So far only acoustic filters exhibit the required Q factor of more than 1000. Therefore, acoustic technology has become a key element to enable carrier aggregation within very small form factors as in smart phones.
Presentations in this session
WE2C-2:
Investigations on design technologies for SAW quadplexer with narrow duplex gap
Authors:
Tsutomu Takai, Murata Manufacturing Co.,Ltd. (Japan);
Hideki Iwamoto, Murata Manufacturing Co.,Ltd. (Japan);
Masayoshi Koshino, Murata Manufacturing Co., Ltd. (Japan);
Masahiro Hiramoto, Murata Manufacturing Co.,Ltd. (Japan);
Takaya Wada, Murata Manufacturing Co., Ltd. (Japan);
Norio Nakajima, Murata Manufacturing Co.,Ltd. (Japan);
Yuichi Takamine, Murata Manufacturing Co., Ltd. (Japan);
Presenter:
Tsutomu Takai, Murata Manufacturing Co.,Ltd., Japan
(10:30 - 10:50)
Abstract
Carrier aggregation (CA) is an inevitable technology to improve the data transfer rate with widening operation bandwidths, while the current frequency assignment of cellular bands is dispersed over. In the frequency division duplex CA, acoustic multiplexers are one of the most important key devices. This paper describes the design technologies for the surface acoustic wave (SAW) multiplexers, such as filter topologies, matching network configurations, SAW characteristics and so on. In the case of narrow duplex gap bandwidth such as Band4 and Band25, the characteristics of SAW resonators such as unloaded quality factor(Q) and out-of band impedances act as extremely important role to realize the low insertion loss and the steep skirt characteristics. In order to solve these challenges, a new type high Q SAW resonator, which we named IHP-SAW (Incredible High Performance-SAW) is introduced. The results of a novel quadplexer of Band4 and Band25 using those technologies show enhanced performances
WE2C-3:
Low Loss and High Isolation Techniques for High Power RF Acoustic Devices
Authors:
Masanori Ueda, TAIYO YUDEN Co., Ltd. (Japan);
Osamu Kawachi, TAIYO YUDEN Mobile Technology Co.,Ltd. (Japan);
Tokihiro Nishihara, TAIYO YUDEN Co., Ltd. (Japan);
Jun Tsutsumi, TAIYO YUDEN Co., Ltd. (Japan);
Presenter:
Masanori Ueda, TAIYO YUDEN Co., Ltd., Japan
(10:50 - 11:10)
Abstract
Requirements for radio frequency (RF) devices in mobile phones have been getting more stringent, especially in multiband / carrier aggregation systems constructing many RF components. In this paper, we discuss two important items for RF acoustic devices developed by our team. First, we introduce the heat radiation effect and temperature compensation technology to suppress the temperature drift of acoustic devices for lower insertion loss. Heat sink effect of substrates and package, and temperature compensated film bulk acoustic resonator (FBAR) devices employing SiOF is introduced. Then, how to suppress the signal leakage from transmission (Tx) to reception (Rx) of the duplexer using signal cancellation technique is discussed, and SAW Band 8 duplexer is demonstrated as an example.
10:10 - 10:30
WE2D:
New Theory and Synthesis Techniques for Planar Filters
Chair:
Magdalena Salazar Palma
Chair organization:
Charles Univ.
Co-chair:
Clark Bell
Co-chair organization:
HF Plus
Location:
306
Abstract:
This session features several new synthesis and design techniques applied to RF and microwave planar filters, along with some realized examples. Paper topics include a design procedure for a fully canonical Nth order Cul-de-Sac bandpass filter, a multilevel aggressive space mapping method algorithm, and a direct synthesis method for lowpass filters with very wide stopbands. In addition, a simple absorptive bandpass filter, a signal interference bandpass filter, and a direct synthesis technique for the coupling matrix of mixed topology filters are presented.
Presentations in this session
WE2D-1:
Novel Microstrip Realization and Straightforward Design of Fully Canonical Cul-de-Sac Coupling Bandpass Filters
Authors:
Masataka Ohira, Saitama University (Japan);
Toshiki Kato, Saitama University (Japan);
Zhewang Ma, Univ. of Tsukuba (Japan);
Presenter:
Masataka Ohira, Saitama University, Japan
Abstract
A novel planar-filter realization of a fully Canonical order Cul-de-Sac coupling matrix that can produce the maximum number of transmission zeros (TZs) is proposed in this paper. It is known that a transversal array coupling topology that offers a generalized Chebyshev function response is hard to design in a physical structure, owing to simultaneous excitation of resonators. To overcome such a drawback, this paper introduces a fully canonical Cul-de-Sac coupling that can be obtained with mathematical transformation from a transversal array coupling. The proposed filter structure has two resonator blocks: one is a block of even-mode half-wavelength resonators, and the other is a block of odd-mode ones. The filter can be easily designed by coupling coefficients between two adjacent resonators without any cross couplings. The effectiveness of the proposed filter is verified with synthesis, design, and test of a 2-GHz fourth-order microstrip filter with four TZs.
14:30 - 14:50
WE3B:
Advances in LNA Technologies
Chair:
Phillip Smith
Chair organization:
BAE Systems, Inc.
Co-chair:
Luciano Boglione
Co-chair organization:
Naval Research Laboratory
Location:
304
Abstract:
This session presents progress in LNAs based on Si, GaN and GaAs. First, a 16nm FinFET LNA exhibits 3.0dB NF at 2.4GHz while consuming 44uW DC power. Next, an SOI CMOS 4.9-5.9GHz LNA employing body-contacted transistor has achieved improved linearity of +12.7dBm IIP3. A SiGe BiCMOS process was used to integrate an SPDT switch with LNA for X-band T/R applications. A Q-band InAlGaN/GaN LNA has produced NF of 3.0dB with extremely small chip size by employing a current-reuse topology. The session concludes with an E-band MHEMT MMIC with LNA, power detector and gain control stage integrated on a single chip.
Presentations in this session
WE3B-4:
Q-Band InAlGaN/GaN LNA Using Current Reuse Topology
Authors:
Masaru Sato, Fujitsu Labs Ltd. (Japan);
Yoshitaka Niida, Fujitsu Labs Ltd. (Japan);
Yoichi Kamada, Fujitsu Labs Ltd. (Japan);
Kozo Makiyama, Fujitsu Labs Ltd. (Japan);
Shiro Ozaki, Fujitsu Labs Ltd. (Japan);
Toshihiro Ohki, Fujitsu Labs Ltd. (Japan);
Naoya Okamoto, Fujitsu Labs Ltd. (Japan);
Kazukiyo Joshin, Fujitsu Labs Ltd. (Japan);
Presenter:
Masaru Sato, Fujitsu Labs Ltd., Japan
Abstract
A 33 to 41-GHz Low Noise Amplifier (LNA) with a 3-dB Noise Figure (NF) using 0.12-um InAlGaN/GaN HEMT was developed. The LNA consists of a two-stage common-gate amplifier with current reuse topology in order to obtain a high gain with low power consumption. The developed LNA achieved 15-dB gain, and an input return loss of less than -10 dB. The measured NF was 3 dB, and the power consumption was 280 mW. The measured OIP3 and OP1dB were 24 dBm and 13 dBm at 38 GHz under a supply voltage of 20 V. The chip size of the LNA is 1×0.7 mm2.
14:00 - 16:00
WEIF2:
Interactive Forum - Wednesday Afternoon
Location:
301 & 302
Presentations in this session
WEIF2-3:
An FPGA-based All-Digital Transmitter with 28-GHz Time-Interleaved Delta-Sigma Modulation
Authors:
MASAAKI TANIO, NEC Corp. (Japan);
Shinichi Hori, NEC Corp. (Japan);
Noriaki Tawa, NEC Corp. (Japan);
Tomoyuki Yamase, NEC Corp. (Japan);
KAZUAKI KUNIHIRO, NEC Corp. (Japan);
Presenter:
MASAAKI TANIO, NEC Corp., Japan
Abstract
An FPGA-based all-digital transmitter with 28-GHz ΔΣ-modulation is presented. For improving the operation
frequency of ΔΣ modulator(DSM), a multi-channel look-ahead time-interleaved ΔΣ modulator is proposed. By implementing the proposed DSM in an FPGA, 28-GHz operation of DSM is achieved. Furthermore, FPGA-based all-digital transmitter integrating the proposed DSM can satisfy the spectral mask of IEEE 802.11a WLAN standard in 5.2-GHz band. To the best of our knowledge, this is the first demonstration of an FPGA-based all-digital transmitter which can directly generate 5-GHz band WLAN signal.
WEIF2-29:
Demonstration of 20-Gbps Wireless Data Transmission at 300 GHz for KIOSK Instant Data Downloading Applications with InP MMICs
Authors:
Ho-Jin Song, NTT Device Technology Labs. (Japan);
Toshihiko Kosugi, NTT Device Technology Labs. (Japan);
Hiroshi Hamada, NTT Device Technology Labs. (Jersey);
Takuro Tajima, Nippon Telegraph and Telephone Corp. (Japan);
Amine EL MOUTAOUAKIL, NTT Device Technology Labs. (Japan);
Hideaki Matsuzaki, NTT Device Technology Labs. (Japan);
Makoto Yaita, NTT Device Technology Labs. (Japan);
Yoichi Kawano, Fujitsu Limited (Japan);
Tsuyoshi Takahashi, Fujitsu Limited (Japan);
Yasuhiro Nakasha, Fujitsu Limited (Japan);
Naoki Hara, Fujitsu Limited (Japan);
Katsumi Fujii, National Institute of Information and Communications Technology (Japan);
Issei Watanabe, National Institute of Information and Communications Technology (Japan);
Akifumi Kasamatsu, National Institute of Information and Communications Technology (Japan);
Presenter:
Hiroshi Hamada, NTT Device Technology Labs., Jersey
Abstract
In this report, we present 20-Gbps wireless ASK data transmission at 300 GHz with all electronic transmitter and receiver for KIOSK instant data downloading applications. The transmitter and receiver MMICs are based on InP based high electron mobility transistors (HEMTs) technologies of which cut-off frequency (fmax) is approximately 700 GHz. For experiment, the transmitter and receiver were packaged in a split-block waveguide and dedicated metallic housing, respectively. With 30-dBi and 25-dBi horn antennas for the transmitter and receiver, error free data transmission (BER < 1 x 10-9) was achieved at up to 80-cm link distance.
16:35 - 16:55
WE4F:
Novel CMOS THz/MMW Signal Generation Circuits
Chair:
Goutam Chattopadhyay
Chair organization:
NASA’s Jet Propulsion Lab
Co-chair:
Joe Qiu
Co-chair organization:
U.S. ARMY Research Office
Location:
308
Abstract:
This session will showcase the latest advances in THz/mmW signal generation implemented in CMOS technology. It stars with a pair of phase shifters, moving on to a up-converting mixer, high-frequency switch, and high-efficiency fundamental source.
Presentations in this session
WE4F-3:
Quintic Mixer: A Subharmonic Up-Conversion Mixer for THz Transmitter Supporting Complex Digital Modulation
Authors:
Kyoya Takano, Hiroshima University (Japan);
Shinsuke Hara, National Institute of Information and Communications Technology (Japan);
Kosuke Katayama, Hiroshima University (Japan);
Shuhei Amakawa, Hiroshima University (Japan);
Takeshi Yoshida, Hiroshima University (Japan);
Minoru Fujishima, Hiroshima University (Japan);
Presenter:
Kyoya Takano, Hiroshima University, Japan
Abstract
To realize a terahertz (THz) transmitter that supports complex digital modulation with a CMOS process having a sub-THz fmax, an unconventional triple-conversion architecture is introduced. Its first mixer is a quadrature modulator. The second mixer generates a second IF signal with modulated upper and lower sidebands (signal and its image). The third mixer is the frequency quintupler-based, LO-less “quintic mixer” with an amplitude-distortion compensation filter. It up-converts the second IF signal to RF with high linearity using the two modulated sidebands. No LO signal needs to be supplied. A proof-of-concept experiment of the quantic mixer is demonstrated using a CMOS test chip with an on-chip IF receiver. A 16-QAM signal centered around 159 GHz is successfully generated from a modulated second IF signal at 31 GHz.
May 26 - Thursday
8:40 - 9:00
TH1G:
Advances in Wideband Radar Systems
Chair:
Rudy Emrick
Chair organization:
Orbital ATK
Co-chair:
Chris Rodenbeck
Co-chair organization:
Naval Research Laboratory
Location:
309
Abstract:
The session presents system hardware, coding and synchronization advances for wideband radar applications. Novel approaches and architectures are described and supported by experimental results.
Presentations in this session
TH1G-3:
A Frequency Synchronization Scheme for Time Varying Doppler-shift Compensation using the Direct Return Signal
Authors:
Keisuke Nakamura, Mitsubishi Electric Corp. (Japan);
Kenichi Tajima, Mitsubishi Electric Corp. (Japan);
Morishige Hieda, Mitsubishi Electric Corp. (Japan);
Presenter:
Keisuke Nakamura, Mitsubishi Electric Corp., Japan
Abstract
In this paper, a novel frequency synchronization scheme between platforms for a bistatic SAR is described. The proposed scheme uses the direct return signal to compensate a time varying Doppler-shift. The synchronization is established by using a PLL technique. And in a PFD of the PLL, the Doppler-shift of a reference signal for the PLL is canceled out by the Doppler-shift of the direct return signal. A detail analysis of the synchronization error for the proposed scheme is presented. Experimental results show that the proposed scheme achieves stable frequency synchronization between the platforms under the time varying Doppler-shift. And theoretical analysis and experimental results indicate that the synchronization error of 3.3×10-12 can be achieved in the assumed condition. This synchronization error is enough to satisfy the requirements for bistatic SARs.
9:00 - 11:00
THIF1:
Interactive Forum - Thursday Morning
Location:
301 & 302
Presentations in this session
THIF1-5:
Nondestructive Reflection Imaging in the W-band Using Photonics-Based Incoherent Signal Source
Authors:
Atsushi Kanno, National Institute of Information and Communications Technology (Japan);
Norihiko Sekine, National Institute of Information and Communications Technology (Japan);
Akifumi Kasamatsu, National Institute of Information and Communications Technology (Japan);
Naokatsu Yamamoto, National Institute of Information and Communications Technology (Japan);
Mitsuru Yoshida, NEC Network and Sensor Systems, Ltd. (Japan);
Norio Masuda, NEC Network and Sensor Systems, Ltd. (Japan);
Presenter:
Atsushi Kanno, National Institute of Information and Communications Technology, Japan
Abstract
Radio-based nondestructive imaging is demonstrated with photonics-based signal source. Photonics technology has advantages on use of an amplified spontaneous emission noise from an optical amplifier utilized as an incoherent signal and easy distribution feature via an optical fiber network. Fiber-remoted optical-to-millimeter-wave converter irradiates 90-GHz radio waves based on an optical fiber network technology. Low-loss optical fibers enable scalability to increase of a number of converters and flexibility of location configuration of illuminators. Reflection imaging is performed in a 90-GHz band under single and multi-illumination configuration. Obtained images are consistent with theoretical resolution.
THIF1-9:
Active imaging with incoherent sub-terahertz radiation from a photomixer array in a severe smoke
Authors:
Naofumi Shimizu, Nippon Telegraph and Telephone Corp. (Japan);
Ken Matsuyama, Tokyo University of Science (Japan);
Seiji Okinaga, Tokyo University of Science (Japan);
Presenter:
Naofumi Shimizu, Nippon Telegraph and Telephone Corp., Japan
Abstract
The imaging capability of active imaging with incoherent sub-terahertz (THz) radiation from a photomixer array in a smoky environment was investigated. The photomixer array consisted of nine uni-traveling-carrier photodiode modules, each with an integrated antenna. Incoherent sub-THz waves were generated by a photomixing scheme employing single-mode laser light and optical noise. As reference, the visibility for visible light in the smoky environment was evaluated using a light transmission smoke meter. Imaging tests on a target at a distance of 1.4 m showed that imaging with incoherent sub-THz illumination provides a clear view in heavy smoke for which the visibility was 0.22 m for visible light and 0.44 m for near-infrared light. These results indicate that active imaging with incoherent sub-THz radiation is an effective way to see through smoke.
THIF1-10:
Frequency Chirp Modulation by Electro-Optic Modulator Integrated with Microwave Rat-Race Circuit and Measurement of Chirp Parameter by Using Optical Fiber Dispersion
Authors:
Ryota Nakamura, Univ. of Hyogo (Japan);
Katsuyuki Yamamoto, Univ. of Hyogo (Japan);
Tadashi Kawai, Univ. of Hyogo (Japan);
Akira Enokihara, Univ. of Hyogo (Japan);
Naokatsu Yamamoto, National Institute of Information and Communications Technology (Japan);
Tetsuya Kawanishi, Waseda Univ. (Japan);
Presenter:
Ryota Nakamura, Univ. of Hyogo, Japan
Abstract
The rat-race (RR) circuit, which operates as a 180-degree hybrid, with an asymmetric power split ratio was integrated with the dual electrode type electro-optic modulator on the same substrate. Thereby, frequency chirp modulation with a compact configuration was realized. The RR circuit was designed with 4.5:1 power split ratio on a z-cut LiNbO3 substrate. The operation of the modulator was confirmed by observing the output light spectra. Moreover, we directly measured the chirp parameter by using the chromic dispersion of the optical fiber. The power penalty of the detected modulation signals transmitted through optical fiber was observed as a function of the fiber distance. The chirp parameter of the modulated light at 10 GHz was estimated at 0.47.
THIF1-30:
A Digital Radio-over-Fiber Downlink System based on Envelope Delta-sigma Modulation for Multi-band/mode Operation
Authors:
Shinichi Hori, NEC Corp. (Japan);
Tomoyuki Yamase, NEC Corp. (Japan);
MASAAKI TANIO, NEC Corp. (Japan);
Tomoya Kaneko, NEC Corp. (Japan);
Noriaki Tawa, NEC Corp. (Japan);
Keiichi Motoi, NEC Corp. (Japan);
KAZUAKI KUNIHIRO, NEC Corp. (Japan);
Presenter:
Tomoyuki Yamase, NEC Corp., Japan
Abstract
A digital radio-over-fiber (DRoF) downlink system using envelope delta-sigma modulation (EDSM) for multi-mode/band applications is presented. Analyses and simulations reveal that the EDSM scheme increases tolerance to jitter introduced by optical components. This has been verified and demonstrated with a DRoF link using CMOS EDSM IC. As a result of the improvement, this system successfully meets major 3GPP LTE bands from 760 MHz to 2.6 GHz as well as IEEE 802.11g WLAN standard requirement.
11:10 - 11:30
TH2C:
Silicon-based THz / MMW Broadband Systems
Chair:
Nils Pohl
Chair organization:
Ruhr Univ. Bochum
Co-chair:
Adam Young
Co-chair organization:
Teledyne Scientific
Location:
305
Abstract:
Silicon technology continues to push the limits of THz generation for communication and measurement applications. This session will include presentations on systems with pulsed operation with bandwidths >197 GHz and data rates as high as 30 Gb/s. A dual-band bi-directional transceiver with 12 Gbps in each direction operating at F-band, a high efficiency OOK transmitter at 165 GHz, and a novel sub-picosecond wireless synchronization receiver will be presented.
Presentations in this session
TH2C-4:
CMOS 300-GHz 64-QAM Transmitter
Authors:
Kosuke Katayama, Hiroshima University (Japan);
Kyoya Takano, Hiroshima University (Japan);
Shuhei Amakawa, Hiroshima University (Japan);
Shinsuke Hara, National Institute of Information and Communications Technology (Japan);
Takeshi Yoshida, Hiroshima University (Japan);
Minoru Fujishima, Hiroshima University (Japan);
Presenter:
Kosuke Katayama, Hiroshima University, Japan
Abstract
A QAM-capable 300-GHz transmitter operating above fmax, covering a 30-GHz bandwidth with multiple channels, was recently reported. A key enabling component was a tripler-based up-conversion mixer called the “cubic mixer.” This paper theoretically and experimentally studies the S/N characteristics of such a mixer and elucidates the condition for realizing high single-channel data-rate. 30 Gb/s and 21 Gb/s with, respectively, 32QAM and 64QAM are achieved under optimal conditions. These are faster than the previously reported per-channel data-rate of 17.5 Gb/s.
10:10 - 10:30
TH2G:
Recent developments and applications in waveguiding and radiating structures
Chair:
Jan Machac
Chair organization:
Czech Technical Unv. in Prague
Co-chair:
Tapan Sarkar
Co-chair organization:
Syracuse Univ.
Location:
309
Abstract:
This session will present different novel applications of scattering, radiation and right/left handed transmission line problems. It will also include other interesting phenomena and approaches such as multipactor modeling and the statistical analysis of complex systems.
Presentations in this session
TH2G-1:
Design of Dispersion-free Phase-Shifting Non-reciprocity in Composite Right/Left Handed Metamaterials
Authors:
Tetsuya Ueda, Kyoto Institute of Technology (Japan);
Keisuke Ninomiya, Kyoto Institute of Technology (Japan);
Kazuhiro Yoshida, Kyoto Institute of Technology (Japan);
Tatsuo Itoh, Univ. of California, Los Angeles (United States);
Presenter:
Tetsuya Ueda, Kyoto Institute of Technology, Japan
Abstract
A composite right/left handed metamaterial with almost dispersion-free phase-shifting nonreciprocity over a wideband is proposed. The difference of refractive indices between forward and backward propagation directions is nearly constant with respect to the operational frequency. To achieve this condition, periodic insertion of asymmetric capacitive stubs for nonreciprocity and symmetric inductive stubs for negative permittivity into a normally magnetized ferrite-based CRLH microstrip line is proposed and designed. Numerical simulation and measurement results clearly show phase-shifting nonreciprocity approximately proportional to the operational frequency in the range over 5-7 GHz.
14:00 - 16:00
THIF2:
Interactive Forum - Thursday Afternoon
Location:
301 & 302
Presentations in this session
THIF2-23:
Wireless Data Transmission of 30 Gbps at a 500-GHz Range Using Resonant-Tunneling-Diode Terahertz Oscillator
Authors:
Naoto Oshima, Tokyo Institute of Technology (Japan);
Kazuhide Hashimoto, Tokyo Institute of Technology (Japan);
Daisuke Horikawa, Tokyo Institute of Technology (Japan);
Safumi Suzuki, Tokyo Institute of Technology (Japan);
Masahiro Asada, Tokyo Institute of Technology (Japan);
Presenter:
Naoto Oshima, Tokyo Institute of Technology, Japan
Abstract
A resonant-tunneling-diode (RTD) terahertz oscillator with a large modulation bandwidth was fabricated, and wireless communication using 500 GHz range was demonstrated. The RTD oscillator was directly modulated using a pulse pattern generator. Although the bit error rate (BER) degraded with the bit rate owing to the increase in losses of the cable and bias tee with frequency, a very high bit rate of 30 Gbps with a correctable BER of 1.3E-3 was achieved.
THIF2-26:
Double-Beam CW THz System with Photonic Phase Modulator for Sub-THz Glucose Hydration Sensing
Authors:
Takuro Tajima, Nippon Telegraph and Telephone Corp. (Japan);
Masahito Nakamura, Nippon Telegraph and Telephone Corp. (Japan);
Keiichiro Shiraga, Kyoto Univ. (Japan);
Yuichi Ogawa, Kyoto Univ. (Japan);
Katsuhiro Ajito, Nippon Telegraph and Telephone Corp. (Japan);
Hiroshi Koizumi, Nippon Telegraph and Telephone Corp. (Japan);
Presenter:
Takuro Tajima, Nippon Telegraph and Telephone Corp., Japan
Abstract
We present a double-beam dielectric spectroscopic system using an integrated photonic phase modulator for glucose hydration sensing from 0.25 to 1.0 THz. Compact phase modulators with a photonic circuit and a double-beam scheme using a broadband beam splitter enable us to improve signal stability in sub-THz generation and detection. Using the system, we carried out fast vector measurement on glucose solutions with effective signal stabilization. By incorporating a simple calibration procedure for the extraction of dielectric properties, the Fabry-Perot effect in liquid cell window was mitigated. The system demonstrated accurate detection of glucose dielectric spectra for hydration analysis of glucose–water interaction in sub-THz region.
THIF2-29:
C Band GaN Diode Rectifier with 3W DC Output for High Power Microwave Power Transmission Applications
Authors:
satoshi yoshida, Kagoshima Univ. (Japan);
Akihira Miyachi, Japanese Aerospace Exploration Agency (Japan);
Ryoko Kishikawa, Advanced Industrial Science and Technology (Japan);
Masahiro Horibe, Advanced Industrial Science and Technology (Japan);
KENJIRO NISHIKAWA, Kadir Has Univ. (Japan);
Shigeo Kawasaki, Japanese Aerospace Exploration Agency (Japan);
Presenter:
Shigeo Kawasaki, Japanese Aerospace Exploration Agency, Japan
Abstract
This research reports a 5.8-GHz band GaN (Gallium
Nitride) diode rectifier for high power microwave power
transmission (MPT) systems. Designed rectifier is fabricated and
measured. The fabricated rectifier has large heat sink because
of the high power operation.The GaN diode is directly mounted
on the heat sink. Also, fabricated substrate is screwed to the
heat sink. Measured RF–DC conversion efficiency and output
DC power at 5.9GHz are 32.6% and 3042mW, respectively.
This report makes a first step for future miniaturization by
the hybrid semiconductor integrated circuit (HySiC) technology
which utilizes different type semiconductor devices.
May 27 - Friday
8:00 - 17:00
WFF:
Emerging Devices for Microwave Circuits and Systems/Beyond Graphene Electronic Devices and their Potential for High-Frequency Applications
Organizer:
Dimitris Pavlidis, James Hwang, David Ricketts
Organizer organization:
National Science Foundation, Lehigh University, North Carolina State Univ.
Abstract:
Graphene, a single sheet of carbon atoms arranged in a two-dimensional (2D) honeycomb crystal lattice has been the subject of numerous studies covering fundamental physics and material aspects but also device applications. Work in this area paves the way to related developments that utilize other 2D materials such as chalcogenides, germananes, silicenes, metal oxides and hexagonal boron nitrides. Possibilities exist for designing devices that utilize a combination of materials rather than isolated 2D crystals to satisfy diverse requirements ranging from insulator to direct bandgap properties. Their heterostructures provide further enhancement in device properties and design flexibility. The well-known limitations of opening the bandgap in graphene and its rather limited application in switching applications may consequently be overcome. Exceptionally good performance is expected from graphene and 2D materials in terms of carrier mobility, transconductance and stability. This could lead to a new generation of high frequency devices with much higher operation frequencies and multifunctional features.
Aspects of interest for new generations of such devices include their fabrication technology using various approaches. Their non-linear properties arising from the Dirac cone bandstructure and use in circuits such as frequency multipliers is also of interest. 2D-2D tunneling devices may lead to novel low-power electronic applications. Negative Differential Resistance may also offer the possibility of developing new signal sources. Reconfigurable terahertz plasmonics and metamaterials can be envisaged. Minimizing parasitics and enhancing gate modulation is important for high frequency device applications.
The workshop will focus on Beyond Graphene and Graphene-based Electronic Devices and Components and their Potential for High-Frequency Applications by covering a wide range of aspects from materials, to devices and their applications. Emphasis will be placed on high-frequency frequency applications but aspects such as switching, thermal management and integration possibilities with other device types such as sensors and Micro-Electro-Mechanical-Systems (MEMS) will also be considered.
Presentations in this session
WFF-6:
Spin Torque Oscillators and Diodes
Authors:
Shingo Tamaru, National Institute of Advanced Industrial Science and Technology (AIST) (Japan);
Presenter:
Shingo Tamaru, National Institute of Advanced Industrial Science and Technology (AIST), Japan
Abstract
Spin torque oscillators (STOs) and spin torque diodes (STDs) have been attracting a great deal of attention since their initial experimental demonstrations that were carried out in the beginning of the 21 century. The STO generates a microwave signal from an injected DC current i.e. acting as a microwave oscillator, while the STD generates a DC signal from an injected microwave current, i.e. acting as a microwave rectifier. The functionalities of these devices are reciprocal but their structures are very similar. The most notable advantage of these devices compared with the conventional semiconductor microwave oscillator or rectifier circuits is that STOs and STDs are very small, typically on the order of 100 nm, and do not need an external resonator. This makes significant circuit miniaturization possible, which is a big benefit for the design of next generation microwave integrated circuits.
In this talk, the basic principles of these devices are first explained, then recent progresses for developing a high performance STO and STD are reviewed with an emphasis put on research efforts within AIST. Lastly, future research directions to mature these devices for the use in real commercial applications are discussed.